一、应用
通讯、航空、航天、军事、移动通信、数字程控交换机、网络传输、接入网、光传输、
雷达、导航、电子对抗、无线通信、测试设备、锁相环电路SDH、SONET、ATM、WLL、
PCS基站、蜂窝基站、频率合成器
二、主要技术指标
1)Frequency Range 频率范围:1.00-200.00MHz
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,
8.192MHz,9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz ,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
2)Initial Calibration 频率准确度: A ≤±1.0ppm @25℃ B ≤±0.5ppm @25℃
3)Frequency Adjustment 频率调整: 1 Ageing adjustment: ≥ ±5ppm
2 No frequency adjustment
4)Operating Temperature 工作温度范围: C -20-+70℃ D -40-+85℃ E -55-+105℃
5)Frequency Stability 温度频率稳定度:F ±0.28ppm G ±0.5ppm H ±1.0ppm
I ±1.5ppm J ±2.0ppm K ±2.5ppm
6)Output Waveform 输出波形: 1 Sine 正弦波 2 Hcmos 方波 3 Clipped Sine 削峰正弦波
7)Supply Voltage 工作电压范围: L 3.3V±10% M 5.0V±10%
8)Ageing 频率老化率: ±1ppm maximum in first year,±3ppm maximum for 10 years
9)Phase Noise 相位噪声:
|
Frequency |
10Hz |
100Hz |
1kHz |
10kHz |
100kHz |
|
13.0MHz |
–95 dBc/Hz |
–120dBc/Hz |
–135dBc/Hz |
–140dBc/Hz |
–145dBc/Hz |
10)Package Outline 封装、尺寸:
N DIP 21*13*5mm O DIP 18*12*5mm P DIP 20*20*10mm Q DIP 36*27*16mm
R SMD 5*3*1mm S SMD 7*5*2mm T SMD 9*7*3mm U SMD 14*9*6mm
11)Storage Temperature 储存温度范围： -55-+125℃
三、产品定型 RTT-10MHZ-B 2 D G 1 M S
|
|
频率 |
准确度 |
频率调整 |
温度范围 |
稳定性 |
波形 |
电压 |
尺寸 |
|
RTT |
10 |
B |
2 |
D |
G |
1 |
M |
S |
|
RTT |
10MHZ |
±0.5ppm
@25℃ |
Nofrequency adjustment |
-40-+85
℃ |
±0.5ppm |
Sine |
5.0V |
SMD
7*5*2mm |
|
封装 |
尺寸 |
电压 |
频率 |
MHz |
稳定性 |
工作温度 |
输出波形 |
|
TCXOs SMD |
11 x 9mm |
3.0V |
9.6 to 40 |
MHz |
±2.5ppm ±5ppm |
-30 to 75°C |
Clipped Sine |
|
TCXOs SMD |
7 x 5mm |
3.0V |
10 to 26 |
MHz |
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Clipped Sine |
|
TCXOs SMD |
7 x 5mm |
3.3V |
10 to 40 |
MHz |
±0.9ppm |
-20 to 70°C |
HCMOS |
|
TCXOs SMD |
5 x 3mm |
3.0V |
16 to 33.6 |
MHz |
±0.5ppm |
-40 to 85°C |
Clipped Sine |
|
TCXOs SMD |
5 x 3mm |
3.0V |
10 to 30 |
MHz |
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Clipped Sine |
|
TCXOs SMD |
7 x 5mm |
3.3V |
10 to 40 |
MHz |
±0.9ppm |
-20 to 70°C |
HCMOS |
|
TCXOs SMD |
7 x 5mm |
3.3V |
10 to 40 |
MHz |
±0.5ppm |
-40 to 85°C |
HCMOS |
|
TCXOs SMD |
7 x 5mm |
5.0V |
1.25 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
7 x 5mm |
5.0V |
10 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
7 x 5mm |
5.0V |
10 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
7 x 5mm |
3.3V |
1.25 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
7 x 5mm |
3.3V |
10 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
7 x 5mm |
3.3V |
10 to 40 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-40 to 85°C |
Clipped Sine |
|
TCXOs SMD |
14.1 x 9.1mm |
5.0V |
1 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Square HCOMS |
|
TCXOs SMD |
14.1 x 9.1mm |
5.0V |
8 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Sine |
|
TCXOs SMD |
14.1 x 9.1mm |
5.0V |
1 to 80 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Square ACMOS |
|
TCXOs SMD |
14.1 x 9.1mm |
5.0V |
8 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Clipped Sine |
|
TCXOs SMD |
14.1 x 9.1mm |
3.3V |
1 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Square HCOMS |
|
TCXOs SMD |
14.1 x 9.1mm |
3.3V |
8 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Sine |
|
TCXOs SMD |
14.1 x 9.1mm |
3.3V |
1 to 80 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Square ACMOS |
|
TCXOs SMD |
14.1 x 9.1mm |
3.3V |
8 to 50 |
MHz |
±0.3ppm ±0.5ppm ±1ppm
±1.5ppm ±2ppm ±2.5ppm |
-55 to 105°C |
Clipped Sine |
|
TCXOs SMD |
5 x 3mm |
3.3V |
1 to 52 |
MHz |
±0.2ppm±0.3ppm
±0.5ppm ±1ppm ±2ppm |
-40 to 85°C |
Square HCOMS |
|
TCXOs SMD |
5 x 3mm |
3.0V |
12 to 52 |
MHz |
±0.2ppm ±0.3ppm
±0.5ppm ±1ppm ±2ppm |
-40 to 85°C |
Clipped Sine |
|
|
VC-TCXO TCXO |
|
Size(mm) |
SMD 5.0X3.2X1.05 mm |
|
Output Frequency Range |
10MHz - 40 MHz |
|
Supply Voltage (Vdd) |
+3.3V |
|
Current Consumption |
+1.2mA ≤15MHz +1.4mA 15-26MHz +1.6mA >26MHz |
|
Output Level |
0.8Vp-p min. Clipped sinewave/ DC-coupled 10k? // 10pF |
|
Freq Stability Tolerance |
≤±1.5ppm (with frequency adjustment) |
|
Vs. Temperature |
H: ≤±1.0ppm D:-40-+85°C G: ≤±0.5ppm D: -40-+85°C |
|
Vs. Supply Voltage |
≤±0.2ppm |
|
Vs. Load Variation |
≤±0.2ppm |
|
Vs.Aging |
≤±1.0ppm/year |
|
Frequency Control |
±3.0ppm-±5.0ppm/+1.5+-1V |
|
Phase Noise |
≤15MHz 15-26MHz >26MHz
-115dBc/Hz@100Hz -110dBc/Hz@100Hz -105dBc/Hz@100hz
-135dBc/Hz@1KHz -130dBc/Hz@1KHz -125dBc/Hz@1Khz
-145dBc/Hz@10KHz -140dBc/Hz@10KHz -135dBc/Hz@10Khz
-145dBc/Hz@100KHz -145dBc/Hz@100KHz -145dBc/Hz@100Khz |
|
|
VC-TCXO TCXO
Size(mm): DIP 25.0X15.0X10.0mm DIP 21.0X13.0X7.0mm
Output Frequency Range: 1MHz - 200 MHz 1MHz - 30 MHz
Supply Voltage (Vdd): +3.3VDC +5VDC +12VDC
Current Consumption: +10mA
Output Level:Sinewave HCMOS TTL Clipped Sinewave
Freq Stability Calibration: ≤±0.5ppm (with frequency adjustment)
Vs. Temperature: ≤±0.2ppm ≤±0.3ppm ≤±0.4ppm ≤±0.5ppm ≤±1.0ppm
-10-+60°C -20-+70°C -30-+70°C -40-+85°C
Vs. Supply Voltage: ≤±0.1ppm
Vs. Load Variation: ≤±0.1ppm
Vs.Aging: ≤±1.0ppm/year
Frequency Control: ±3.0ppm/0-5V
Phase Noise: 10MHz -130dBc/Hz@1KHz
|
参数名称 |
技术指标 |
|
外形尺寸 |
DIP 13*13 * 6mm 18.3* 11.7 *9mm 21*13*7mm |
|
输出 |
频率(f0) |
1-200MHz |
|
正弦波 |
输出幅度 |
+7 dBm Min. |
|
杂散 |
-70 dBc Max. |
|
谐波 |
-30 dBc Max. |
|
负载(Load) |
50Ω |
|
方波 |
电平 |
HCMOS |
|
占空比 |
45～55% |
|
上升/下降时间 |
4 nS Max. |
|
负载(Load) |
4 TTL |
|
|
温度特性(df/f0) |
±1 ppm Max. -20～70℃ |
|
±2 ppm Max. -40～85℃ |
|
日老化率(df/f0) |
±0.01 ppm Max. |
|
频率稳定度 |
年老化率(df/f0) |
±1 ppm Max. |
|
电压特性(df/f0) |
±0.1 ppm Max. Vs±5% |
|
负载特性(df/f0) |
±0.1 ppm Max. Load±10% |
|
短稳(df/f0) |
0.5 ppb Max. |
|
相位
噪声 |
@10 Hz |
-90 dBc/Hz Max. |
|
@100 Hz |
-110 dBc/Hz Max. |
|
@1k Hz |
-135 dBc/Hz Max. |
|
@10k Hz |
-140 dBc/Hz Max. |
|
微调 |
电压
微调 |
牵引范围(df/f0) |
±5 ppm Min. |
|
控制电压范围 |
1.5±1.0 VDC / 2.5±2.5 VDC |
|
线性度 |
±10% Max. |
|
输入阻抗 |
20kΩ Min. |
|
功耗 |
工作电压(Vs) |
+3.3 VDC +5 VDC |
|
工作电流 |
8 mA |
2.5MHz,3.2MHz,4.608MHz,4.096MHz,5MHz,5.12MHz,6.4MHz,6.5MHz,6.72996MHz,8.192MHz,
9.216MHz,10MHz,10.24MHz,12MHz,12.24MHz,12.288MHz,12.8MHz,13MHz,14.4MHz,
14.7456MHz,14.85MHz,16MHz,16.32MHz,16.368MHz ,16.384MHz,16.8MHz,17MHz,
18.432MHz,19.2MHz,19.44MHz,19.68MHz,19.7985MHz,19.8MHz,20MHz,20.46MHz,20.48MHz,
20.82857MHz,24MHz,24.576MHz,25MHz,25.6MHz,26MHz,26.451788MHz,27MHz,29.952MHz,
32MHz,32.768MHz,33MHz,36.864MHz,38MHz,38.88MHz,40MHz,50MHz,61.44MHz,77.76MHz,
100MHz,120MHz,122.88MHz,140MHz,160MHz,180MHz,200MHz
温补晶振 TCXO 10MHz ±0.5ppm, －40℃~ +85℃, 5.0V, sine输出, 不带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 10MHz ±0.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 10MHz ±0.5ppm, －40℃~ +85℃, 3.3V, sine输出, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 10MHz ±0.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 10MHz ±1.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±2.0ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±2.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 10MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 10MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 10MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 20MHz ±0.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 20MHz ±0.5ppm, －40℃~ +85℃, 3.3V, sine输出, 不带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 20MHz ±0.5ppm, －40℃~ +85℃, 3.3V, sine输出, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 20MHz ±0.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 20MHz ±1.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±2.0ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±2.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO20MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 20MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 20MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 20MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 40MHz ±0.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 40MHz ±0.5ppm, －40℃~ +85℃, 3.3V, sine输出, 不带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 40MHz ±0.5ppm, －40℃~ +85℃, 3.3V, sine输出, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 40MHz ±0.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±1.0ppm, －20℃~ +70℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5×2mm
温补晶振 TCXO 40MHz ±1.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±2.0ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±2.5ppm, －40℃~ +85℃, 3.3V, clipped sine, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 5×3mm
温补晶振 TCXO 40MHz ±1.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 40MHz ±2.0ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm
温补晶振 TCXO 40MHz ±2.5ppm, －40℃~ +85℃, 3.3V, Hcmos, 带频率调整,封装SMD 7×5mm